Package support, fabrication method and led package

ABSTRACT

A light-emitting diode (LED) package, including: a substrate with front and back surfaces, including: at least two metal blocks; an insulation portion, wherein the metal blocks are disposed in the insulation portion and have at least portions of upper and lower surfaces exposed; and an electrical insulation region between the at least two metal blocks; an LED chip disposed over, and forming one or more electrical connections with, the at least two metal blocks; and a package encapsulant disposed over the LED chip surface and covering at least a portion of the substrate; wherein the at least two metal blocks have protrusion connection portions that extend to an edge of the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of, and claims priority toU.S. patent application Ser. No. 14/606,038 filed on Jan. 27, 2015,which claims priority to Chinese Patent Application Nos. CN201420075500.7 filed on Feb. 21, 2014, CN 201420695174.X filed on Nov.19, 2014, and CN 201420822588.4 filed on Dec. 23, 2014. The disclosuresof these applications are hereby incorporated by reference in theirentirety.

BACKGROUND

Light Emitting Diode (LED) is a semiconductor light-emitting devicefabricated by employing P-N junction electroluminescence principles.Advantageous in environmental protection, high luminance, low powerconsumption, long service life, low working voltage and easyintegration, the LED is the fourth-generation new light source followingincandescent lamp, fluorescent lamp and high intensity discharge lamp(HID) (e.g., HPSL and metal halide lamp).

SUMMARY

Existing LED package supports have low cell density (only 200-300 cellsper support), which wastes material and reduces production efficiency;the holes at the support also impede advanced technologies such asMolding. In addition, the large support cell area is to the disadvantageof luminous efficiency improvement and convenient optical design.Therefore, a new support is needed for LED package to solve the aboveproblems.

Each cell of the existing support is much larger than the chip, leadingto increased consumption of phosphor and package encapsulant by the LEDpackage structure. After the scattering of emitted light and thephosphor, the packaged body has increased consumption. Therefore, it maybe necessary to make certain improvements to the existing LED packagestructure that impedes the shrinkage of the sizes.

To solve the above problems, the present disclosure provides a packagesupport, fabrication method and LED package, wherein, the packagesupport has such features as high cell density, low price, highreflectivity, good heat dissipation and high reliability. The LEDpackage has smaller size and better heat dissipation.

According to a first aspect of the present disclosure, a package supporthaving metal frameworks or frames connected and an inner gap filled withdielectric material. The package support has a frame region and afunction region. The function region has complete upper and lowersurface with no penetrating holes, which prevents leakage when theentire surface is covered with encapsulant material.

Preferably, the metal framework forms a buckle at vertical directionwith the dielectric material.

Preferably, the support thickness is less than 0.5 mm.

Preferably, the metal framework is at least two-layer structure and thesurface is high-reflectivity material.

Preferably, the metal framework is high-thermal conductivity material,at least comprising one of Cu and Al. More preferably, the metalmaterial is an at least two-layer structure and the surface ishigh-thermal conductivity material, at least comprising one of Ag andAl.

Preferably, the metal framework comprises a front framework and a backframework. The front framework is vertically stacked with the backframework. The back framework is connected and the area is larger thanthe front framework.

Preferably, the dielectric material is thermosetting plastic, at leastcomprising one of SMC, EMC and Polyester. More preferably, thedielectric material is black EMC material and the upper surface iscovered with highly reflective insulation layer. The highly reflectiveinsulation layer's reflectivity to 450 nm wavelength light is more than90%.

Preferably, the dielectric material has two-layer structure, in which,the bottom layer is black plastic and the top layer is white plastic.

Preferably, the package support comprises at least one function region.More preferably, to enhance structure strength, the support is dividedinto different function regions, which are separately from each other bymetal.

Preferably, the dielectric materials in each function region areconnected.

Preferably, the function region has a series of tightly-arranged cells(at least 500 cells). In some embodiments, each cell area in thefunction region is not more than 9 mm²; in some embodiments, the uppersurface of each cell is square; in some embodiments, each cell has twometal blocks of equal size as the metal framework. The two metal blockshave no metal connection inside the cell.

Preferably, the frame region has alignment marks and air discharge ductsfor half etching cutting.

Preferably, the frame region has a positioning hole.

According to a second aspect of the present disclosure, a packagesupport having metal frameworks connected and an inner gap filled withdielectric material. The metal framework is a multi-layer structure,each layer having different patterns.

Preferably, the metal framework is an at least two-layer structure. Theareas of dielectric materials decrease layer by layer from upper layerto bottom layer. In some preferred embodiments, the dielectric materialarea at bottom layer is not less than 40% of that of the upper layer.

Preferably, the metal framework is an at least two-layer structure. Thedielectric material area ratio of at least two layers is between 0.4:1and 2.5:1.

Preferably, the metal framework is an at least two-layer structure. Thedielectric material area ratio of top layer and any of lower layers isbetween 1:2.5 and 1:0.4.

Preferably, the metal framework is an at least two-layer structure. Thedielectric material area ratio of at least two layers is between 0.5 and1.2. More preferably, at least two layers of dielectric materials areequal in size. Most preferably, dielectric material areas of all layersare equal.

Preferably, the metal framework has an upper layer and a lower layer,wherein, the dielectric material area of the lower layer is between 0.4times and 2.5 times of that of the upper layer. In some preferredembodiments, the dielectric material area of the lower layer is between0.5 times and 1.2 times of that of the upper layer.

Preferably, the metal framework has an upper layer and a lower layer andthe dielectric material appears in “T” and “Inversed-T” shape.

Preferably, the metal framework is a three-layer structure and thedielectric material appears “H” and “Cross” shape.

According to a third aspect of the present disclosure, a fabricationmethod for package support, comprising: providing a metal substrate anddetermining the front pattern and the back pattern, in which, the backpatterns are connected, and the front pattern is smaller than the backpattern; etching the front surface and the back surface of the metalsubstrate by two times to remove the regions beyond the front patternand the back pattern; forming gap inside the metal substrate to form ametal framework; filling in dielectric material in the gap, wherein, themetal framework is parallel with the upper surface of the dielectricmaterial.

The above package support has high cell density and efficiently savespackage material; besides, it is easy for light emitting and improveslighting effect; due to small and thin cell, the support has good heatdissipation with application of material like Cu; the function region ofthe support is free of penetrable holes and the buckle structure isarranged between the metal and the dielectric material, preventing fromleakage and facilitating the application of advanced technologies likeMolding.

According to a fourth aspect of the present disclosure, a LED package,comprising a substrate with complete front and back surfaces, comprisingat least two metal blocks and an insulation portion, wherein, the metalblocks are inlaid in the insulation portion and expose portion of upperand lower surfaces. An electrical insulation region is set between themetal blocks; a LED chip over the metal block of the substrate and formselectrical connection with at least two metal blocks; and packageencapsulant covering over the LED chip surface and portion of thesubstrate. In this technical proposal, the LED package substrate is thepackage support.

Preferably, the metal block has protrusion connection portions thatextend to the substrate edge.

Preferably, the substrate has at least two metal blocks for electricconduction and heat dissipation. Each metal block has at least threeprotrusion connection portions. In some embodiments, two metal blocksare axial symmetric.

Preferably, the metal block has at least one protrusion connectionportion appearing in angle of inclination with the metal block. In someembodiments, two metal blocks are rotational symmetric at 180°.

Preferably, the electrical insulation region between metal blocksappears in “I” or “H” shape.

Preferably, the electrical insulation region between metal blocksappears in “S” or inverted-“S” shape.

Preferably, the metal block forms a snug coupling with the insulationportion at vertical direction.

Preferably, in the substrate, divide the metal blocks into an upperportion and a lower portion at vertical direction, wherein, the upperportion is the front surface of the substrate and the lower portion isthe back surface of the substrate. The upper portion and the lowerportion have different shapes. In some embodiments, some portion of theupper portion of the metal block horizontally protrudes relative to thelower portion and some portion of the lower portion of the metal blockhorizontally protrudes relative to the upper portion. In someembodiments, the protrusion connection portion is at the upper portionor the lower portion of the metal block.

Preferably, the package encapsulant is 0.2-5 mm thick. In someembodiments, the package encapsulant is 0.2-3 mm thick; in someembodiments, to enlarge the light-emitting angle of the package, thepackage encapsulant is thicken (preferably: 0.5-5 mm)

In some embodiments, to further enlarge the light-emitting angle of thepackage, the light-emitting surface side of the package encapsulant hasan arc shape.

Preferably, the LED package also comprises a wavelength conversiondevice, which directly adds phosphor in the package encapsulant ordirectly sets the wavelength conversion material layer over the LED chipsurface/package encapsulant surface.

The upper and lower surfaces of the LED package substrate are flatsurfaces. The LED chip is directly located at the metal block of thesubstrate. Through the electric conduction and heat dissipation of themetal block, the heat dissipation of the package is improved. Widerlight-emitting angle and higher light-emitting efficiency are achievedfor the light will not be blocked by the support (e.g., bowl cup) sidewall; the metal block of the substrate is inlaid in the insulationportion. The upper and lower portions of each metal block are differentin shape, forming a snug coupling structure with the insulation portion,which improves the soundness of the package. Further, the packagesupport is a multi-layer structure, each layer having differentpatterns. The support warping can be solved by designing the area ratioof dielectric materials in each layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a front view of an LED package support according to someembodiments.

FIG. 2 is a back view of a LED package support according to someembodiments.

FIG. 3 is a frame region of the package support as shown in FIG. 1.

FIG. 4 is a front view and back view of frame region of the packagesupport as shown in FIG. 1.

FIG. 5 is an enlarged view of the metal framework of the package supportas shown in FIG. 4.

FIG. 6 is a local enlarged back view of the package support as shown inFIG. 4.

FIG. 7 is an enlarged view of any cell of the function region in thepackage support as shown in FIG. 4.

FIG. 8 is a side sectional view of a first type of cells of the packagesupport as shown in FIG. 7;

FIG. 9 is a side sectional view of a second type of cells of the packagesupport as shown in FIG. 7;

FIG. 10 is a side sectional view of a third type of cells of the packagesupport as shown in FIG. 7.

FIG. 11 is a side sectional view of a first type of the support showingonly a few cells, where the profile position is the dotted line A→B inFIG. 4;

FIG. 12 is a side sectional view of a second type of the support;

FIG. 13 is a side sectional view of a third type of the support;

FIG. 14 is a side sectional view of a fourth type of the support.

FIG. 15 is a sectional view of a first type of LED package according tosome embodiments.

FIG. 16 illustrates the front pattern of the substrate of the LEDpackage as shown in FIG. 15.

FIG. 17 illustrates the back pattern of the substrate of the LED packageas shown in FIG. 15.

FIG. 18 illustrates a variation of the LED package as shown in FIG. 15.

FIG. 19 illustrates the back pattern of the substrate of a second typeof LED package according to some embodiments.

FIG. 20 is a sectional view of a second type of LED package according tosome embodiments.

FIG. 21 illustrates a variation of the LED package as shown in FIG. 20;

FIG. 22 illustrates another variation of the LED package as shown inFIG. 20.

In the drawings: 101: support function region; 101 a: front surface ofthe support function region; 101 b: back surface of the support functionregion; 101-1: first function region; 101-2: second function region;101-3: third function region; 102: support frame region; 103:positioning hole; 104: alignment mark; 105: air discharge duct; 106:filling mouth; 107: structural strength region; 110: metal framework;110 a: front metal framework; 110 b: back metal framework; 120:dielectric material; 200: any cell in the function region; 210: metalblock; 220: insulation portion; 221: bottom of the insulation portion;222: top layer of the insulation portion; 1100: package substrate; 1110:metal block; 1110 a: upper portion of the metal block; 1110 b: lowerportion of the metal block; 1111-114: protrusion connection portion;1120: insulation portion; 1130: electrical insulation region; 1200: LEDchip; 1300: package encapsulant.

DETAILED DESCRIPTION

The LED package support, fabrication method and LED package structurewill be described in detail with reference to the accompanying drawingsand examples, to help understand and practice the disclosed embodiments,regarding how to solve technical problems using technical approaches forachieving the technical effects.

FIGS. 1 and 2 are front and back views, respectively, of a packagesupport according to some embodiments. A package support comprises afunction region 101 and a frame region 102. Specifically, the functionregion 101 has no penetrating holes, which prevents leakage when theentire surface is covered with encapsulant. It has complete frontsurface 101 a and back surface 101 b, and the patterns of the frontsurface 101 a and the back surface 101 b are different. Detaileddescription will be made by referring to other drawings; the frameregion 102 has a positioning hole 103 and alignment marks 104. In someembodiments, the cutting mark 107 of the support appears in “Line” or“Cross” shape. The cutting mark may be approximate to or far from thefunction region. In some preferred embodiments, an air discharge duct105 and a filling mouth 106 may be set. As shown in FIGS. 1-2, thefunction region 101 of the package support comprises three regions ofsame area. In some embodiments, the function region 101 can be a singleregion or comprise several regions. The areas of different regions canbe same or different. If the function region 101 has several regions, itis preferably that each region has same area. To intensifying thesupport structure, a structure intensive region 107 made of metal may bearranged in the function region. Of course, in the structure intensiveregion 107, the front surface is conductive material and the backsurface is dielectric material, or the back surface is conductivematerial and the front surface is dielectric material to ensure thatareas of dielectric materials in the front and back surfaces areapproximate so as to eliminate the support warping.

FIG. 3 shows the structure of the frame region 102 of the packagesupport as shown in FIG. 1. The frame region 102 is made up of metal.FIG. 4 shows the front view and back view of a single function region ofthe package support. Specifically, the function region 101 has a seriesof tightly-arranged cells (at least 500 cells) and comprises the metalframework or frames 110 and the dielectric material 120, wherein, themetal framework 110 connects with the metal of the frame region 102 toform an entire package support frame. The pattern region 110 (filledwith horizontal line as shown in the front view) is the metal framework.The white pattern region 120 is plastic. As shown in the figure, theplastics in the entire function region are connected together; in theback surface, the white pattern region 110 is the metal framework andthe black pattern region 120 is plastic. As shown in the figure, themetal frameworks of the entire function region are connected together.

FIG. 5 is the enlarged view of the metal framework 110 of the functionregion 101 as shown in FIG. 4, which intercepts four cells in thefunction region. Specifically, the metal framework 110 comprises thefront framework 110 a and the back framework 110 b, which are overlappedvertically, wherein, the back frameworks 110 b are connected and thearea is larger than that of the front framework. Inside the metalframework 110 is the gap 130. The gap is filled with the dielectricmaterial 120. FIG. 6 is the local back enlarged view of the functionregion 101 as shown in FIG. 4, which also intercepts four cells in thefunction region. The white pattern region in the figure is the backmetal framework 110 b of the function region 101 (i.e., the backframework 110 b as shown in FIG. 5) and the black pattern region is thedielectric material 120.

FIG. 7 is the enlarged top view of any cell 200 of the function region110 as shown in FIG. 4. Specifically, the cell 200 comprises two metalblock 210 (i.e., the metal framework 110 as shown in FIG. 5) and theinsulation portion 220 (i.e., the dielectric material 120 as shown inFIG. 6). The two metal blocks 210 have no metal connection inside thecell. In some embodiments, it is preferable that the area of each cell200 is not more than 9 mm². The upper surface of each cell is square.The metal block 210 is high-thermal conductivity material, at leastcomprising one of Cu and Al, which can be single-layer structure ormulti-layer structure. Two-layer structure is preferred. The surface ishigh-thermal conductivity material, at least comprising one of Ag andAl; the insulation portion 220 is thermosetting plastic, at leastcomprising one of SMC, EMC and Polyester. In a preferred embodiment ofthe present disclosure, the metal block 210 is a three-layer structurecomprising silvering upper and lower copper surfaces. Only one layer isused for explanation. FIGS. 8-10 are the three side sectional structuresof the cell as shown in FIG. 7. The insulation portion 220 of the cell200 as shown in FIG. 8 is a single-layer structure. The material is highreflectivity layer (reflectivity >90%), which is preferably white EMC orSMC. The insulation portion 220 of the cell 200 as shown in FIG. 9 is atwo-layer structure. The bottom portion 221 is material with highreliability, mechanical strength and good metal adhesiveness, which ispreferably black EMC, The top layer 222 is high-reflectivity and hightemperature resistance material, which is preferably high-reflectivitysilicone ink. The insulation portion 220 of the cell 200 as shown inFIG. 10 is also a single-layer structure but the material has highreliability, preferably black EMC.

To avoid support warping, it is preferable that the areas of thedielectric material 120 at support front and the dielectric material 120at the back surface are not so different. Specifically, the area ratioof the dielectric materials between the front and back surfaces isbetween 0.4:1 and 2.5:1 and more preferably, between 0.8:1 and 1.2:1.This embodiment also considers heat dissipation and warping problem ofthe support. The areas of dielectric materials decrease layer by layerfrom upper layer to bottom layer, wherein, it is preferable that thedielectric material area at bottom layer is not less than 40% of that ofthe upper layer. Taking the support as shown in FIG. 1 for example, theentire support is 5000 mm². The dielectric material at front surface is2000 mm² and the dielectric material at back surface is preferably notless than 800 mm².

FIGS. 11-14 are side sectional views of the supports of different types(only displaying a few cells). The profile position is the dotted lineA→B in FIG. 4. Referring to FIG. 11, in consideration of approximateareas of the dielectric materials between the upper and lower layers,the dielectric material 120 appears in “T” and “Inversed-T” shape toeliminate the support warping. Referring to FIG. 12, the package supportis a three-layer structure. To achieve approximate area of thedielectric materials for different layers, the dielectric material 120appears in “H” and “Cross” shape. It is to be understood that, thedielectric materials 120 can all appear in “H” and “Cross” shape as longas the dielectric materials of the upper and lower layers areapproximate to eliminate warping. Preferably, the area ratio of thedielectric materials of the middle layer and the lower layer and thedielectric material of the upper layer is between 0.4-2.5. Mostpreferably, the area ratio of dielectric materials for the three layersis 1:1:1. In some embodiments, the support surface may not be flat andthe dielectric material may project over the surface or the metalframework may project over the surface, as shown in FIG. 13 and FIG. 14respectively. As shown in FIG. 13, the package support has three layers,wherein, the top layer only has the dielectric material and has no metalframework, and the middle layer and the lower layer comprise thedielectric material and the metal framework. To eliminate the supportwarping, the dielectric materials of the middle layer and the lowerlayer may appear in “T” shape and “Inversed-T” shape. In considerationof the impact of the dielectric material at top layer, the dielectricmaterial area of the middle layer may be a little smaller than that ofthe lower layer the dielectric material. Preferably, the area ratio isbetween 0.4:1 and 1:1, and most preferably, 0.8:1. FIG. 7 adopts samemethod. The dielectric material may appear in “T” shape and “Inversed-T”shape.

A simple description will be made for a fabrication method of thepackage support. A fabrication method for package support, comprising:providing a metal substrate and determining the front pattern and theback pattern, in which, the back patterns are connected, and the frontpattern is smaller than the back pattern; etching the front surface andthe back surface of the metal substrate by two times to remove theregions beyond the front pattern and the back pattern; forming gapinside the metal substrate to form a metal framework; filling in plasticin the gap, wherein, the metal framework is parallel with the uppersurface of the plastic. Transfer molding is used for filling plastic:placing the etched metal substrate in the flat mould (the upper andlower moulds are flat die) and pressing the plastic over the metalsubstrate; filling plastic from the filling mouth at side of the moulduntil the plastic is filled up with the etched gap. After transfermolding, take out the support, and remove the burr with Deflash. Levelout the plastic surface; heat the support to above flowing temperatureTf for plastic smashing. Lower the temperature to normal temperature tokeep the entire support flat with no warping.

FIGS. 15-17 illustrate a first LED package according to someembodiments, wherein FIG. 16 and FIG. 17 are the front pattern and theback surface pattern, respectively, of the substrate of the LED package.FIG. 15 is the sectional view of the package cut along the Line A-A asshown in FIG. 17.

Referring to FIG. 15, a LED package, comprising: a substrate 1100, a LEDchip 1200 and a package encapsulant 1300. The front and back surfaces ofthe substrate 1100 are flat and complete surfaces, comprising two metalblocks 1110 and an insulation portion 1120; the metal block 1110 isinlaid in the insulation portion 1120 and expose portion of upper andlower surfaces. An electrical insulation region 1130 is set between themetal blocks 1110; the LED chip 1200 is over the front surface of thetwo metal blocks 1110 and forms electrical connection; and the packageencapsulant 1300 is over the LED chip 1200 surface and over portion ofthe substrate.

In this embodiment, the insulation portion 1120 of the substrate iswhite plastic, or thermal plastic (e.g., PPA, PCT, LCP) or thermalsetting plastic (e.g., EMC, SMC, Polyester). Specifically, plastics arefilled around the metal block 1110. Upper portion and lower portionexpose portion of metal to make the metal block 1110 inlaid in theinsulation portion 1120. The front surface of the metal block 1110 isthe LED chip die bonding platform of the function region. The two metalblocks have one LED chip each. The two chips are connected by goldthread (or silver, copper and aluminum threads) for electricalconduction. The two chips may be in series or in parallel. Referring toFIG. 15 again, taking the Reference Plane C as boundary, verticallydivide the metal block 1110 into upper portion 1110 a and lower portion1110 b of different shapes. Specifically, at the place near theelectrical insulation region 1130, the upper portion 1110 a of the metalblock horizontally projects over the lower portion 1110 b; and at theplace near the substrate edge, the lower portion 1110 b of the metalblock horizontally projects over the upper portion 1110 a, thus forminga snug coupling at a vertical direction between the metal block 1110 andthe insulation portion 1120. Referring to FIG. 17, each metal block 1110has three protrusion connection portions 1111, 1112 and 1113, whichextend to the substrate edge. Each protrusion connection portion is atthe lower portion 1110 b of the metal block (in some embodiments, theprotrusion connection portion can be at the upper portion of the metalblock).

The package encapsulant 1300 covers the five surfaces (except thebottom) of the chip, portion of the surface layer of the metal block andthe plastic. The package encapsulant may comprise phosphor forwavelength conversion. The package encapsulant can be 0.2-5 mm thick.

In the above structure, the metal blocks 1110 are axial symmetric. Theelectrical insulation region between them appears in “I” shape (or “H”shape, based on the chip shape) for electrical conduction and heatdissipation, wherein, one metal block is positive pole and the othermetal block is negative pole. To distinguish the positive and negativepoles, the positive and negative pole marks may be formed on the backsurface of the substrate. Referring to FIG. 18, an indent portion may beformed at the inner side of the metal block at right to indicate it ispositive (or negative).

FIGS. 19 and 20 illustrate a second LED package according to someembodiments, wherein, FIG. 19 is the back surface pattern of thesubstrate of the LED package and FIG. 20 is the section view of thepackage cut along the Centerline B-B as shown in FIG. 19. The frontpattern of the substrate is same as that in Embodiment 1.

Referring to FIG. 19, the difference between this embodiment andEmbodiment 1 is that: the metal blocks are rotational symmetric at 180°.The electrical insulation region between them appears in “S” shape (orInversed-S shape). Each metal block has four protrusion connectionportions 1111, 1112, 1113 and 1114. Taking the metal block 1110 at leftas example, the protrusion connection portions 1111 and 1113 are at theleft of the front and back ends of the metal block, the projectedportion 1112 is at the middle portion at the left of the metal block andthe projected portion 1114 is at the right portion of the back of themetal block and appears in angle of inclination with the metal block. Inthis embodiment, the package encapsulant 1300 is 0.2-3 mm thick, whichcan be 1 mm.

Referring to FIG. 21, the thickness of the package encapsulant can beincreased to enlarge the light emitting angle of the package, which is0.5-5 mm, and preferably, 2-5 mm. Referring to FIG. 22, to furtherenlarge and light emitting angle of the package, the light-emitting sideof the package encapsulant 1300 appears in arc shape.

Although specific embodiments have been described above in detail, thedescription is merely for purposes of illustration. It should beappreciated, therefore, that many aspects described above are notintended as required or essential elements unless explicitly statedotherwise. Various modifications of, and equivalent acts correspondingto, the disclosed aspects of the exemplary embodiments, in addition tothose described above, can be made by a person of ordinary skill in theart, having the benefit of the present disclosure, without departingfrom the spirit and scope of the disclosure defined in the followingclaims, the scope of which is to be accorded the broadest interpretationso as to encompass such modifications and equivalent structures.

1. A light-emitting diode (LED) package, comprising: a substrate withfront and back surfaces, including: at least two metal blocks; aninsulation portion, wherein the metal blocks are disposed in theinsulation portion and have at least portions of upper and lowersurfaces exposed; and an electrical insulation region between the atleast two metal blocks; an LED chip disposed over, and forming one ormore electrical connections with, the at least two metal blocks; and apackage encapsulant disposed over the LED chip surface and covering atleast a portion of the substrate; wherein the at least two metal blockshave protrusion connection portions that extend to an edge of thesubstrate.
 2. The LED package of claim 1, wherein the at least two metalblocks are configured for electrical conduction and heat dissipation,and include two metal blocks disposed with an axial symmetricconfiguration.
 3. The LED package of claim 1, wherein the at least twometal blocks include two metal blocks disposed with a rotationalsymmetric configuration at 180°.
 4. The LED package of claim 1, whereinthe electrical insulation has an “I” or “H” shape.
 5. The LED package ofclaim 1, wherein the electrical insulation has an “S” or inverted-“S”shape.
 5. The LED package of claim 1, wherein each metal block has atleast three protrusion connection portions.
 6. The LED package of claim1, wherein at least one protrusion connection portion has an angle ofinclination with respect to a corresponding metal block.
 7. The LEDpackage of claim 1, wherein the at least two metal blocks form a snugcoupling with the insulation portion at a vertical direction.
 8. The LEDpackage of claim 1, wherein: the at least two metal blocks include anupper portion and a lower portion at a vertical direction; the upperportion is at a front surface of the substrate and the lower portion isat a back surface of the substrate; and the upper portion and the lowerportion have different shapes.
 9. The LED package of claim 8, wherein:at least a portion of the upper portion of the at least two metal blockshorizontally protrudes relative to the lower portion; and at least aportion of the lower portion of the at least two metal blockhorizontally protrudes relative to the upper portion.
 10. The LEDpackage of claim 8, wherein the protrusion connection portion is at theupper portion or the lower portion of the at least two metal blocks. 11.The LED package of claim 1, wherein the package encapsulant has athickness of about 0.2-5 mm.
 12. The LED package of claim 1, wherein thepackage encapsulant has a thickness of about 0.2-3 mm.
 13. The LEDpackage of claim 1, wherein the package encapsulant has a thickness ofabout 0.5-5 mm to thereby increase a light-emitting angle of the LEDpackage.
 14. The LED package of claim 1, wherein the package encapsulanthas an arc shape at a light-emitting side to thereby increase alight-emitting angle of the LED package.
 15. The LED package of claim 1,further comprising a wavelength conversion portion.
 16. The LED packageof claim 15, wherein the wavelength conversion portion is disposed inthe package encapsulant.
 17. The LED package of claim 15, wherein thewavelength conversion portion comprises a wavelength conversion materiallayer disposed over the package encapsulant.
 18. A light-emitting systemcomprising a plurality of LED packages, each LED package including asubstrate with front and back surfaces, including: at least two metalblocks; an insulation portion, wherein the metal blocks are disposed inthe insulation portion and have at least portions of upper and lowersurfaces exposed; and an electrical insulation region between the atleast two metal blocks; an LED chip disposed over, and forming one ormore electrical connections with, the at least two metal blocks; and apackage encapsulant disposed over the LED chip surface and covering atleast a portion of the substrate; wherein the at least two metal blockshave protrusion connection portions that extend to an edge of thesubstrate.
 19. The system of claim 18, wherein the metal blocks includefront frames and back frames vertically stacked together, and the backframes are connected together having an area larger than an area of thefront frames.
 20. The system of claim 18, wherein the front and backsurfaces of the substrate are substantially flat to thereby realize awider light-emitting angle and higher light-emitting efficiency.